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  1. Turbo FET-7A (2pcs)

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This turbo FET is used to provide extra power to your motor-powered mini-Z Car with less current consumption. It is the major component for internal turbo setup. It explains why other cars running faster than your while there is no external turbo. The more layer of FET that you can connect in parallel, the more power that your ESC can drive a motor up. Speed up Buddy!

Fifth Generation HEXFETs from International Rectifier untilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, conbined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniquies.

Symbol Maximum Units
N-Channel P-channel
Drain-Source Voltage V(DS) 20 -20 V
Gate-Source Voltage V(GS) + or -12
Continuous Drain Current Ta=25C I(D) 6.6 -5.3 A
Ta=70C 5.3 -4.3
Pulsed Drain Current I(DM) 26 -21
Continuous Source Current
(Diode Condition)
I(s) 2.5 -2.5
Maximum Power Dissipation Ta=25C P(D) 2.0 W
Ta=70C 1.3
Single Pulse Avalanche Energy E(AS) 100 150 mJ
Avalanche Current I(AR) 4.1 -2.9 A
Repetitive Avalanche Energy E(AR) 0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ns
Junction and Storage Temperature Range T(J), T(STG) -55 to 150C C

How to build in the FET?

FET in Stock Car FET in Modified Car

The legs of ICs needs to be straightened before doing the soldering working. In addition, it would fit better if you can braise/sand the bottom of each ICs thinner. A better performance normally needs more contributed time.

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